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Proceedings Paper

GaAs/InGaP/AlGaAs quantum well infrared photodetectors
Author(s): Patamaporn Keshagupta; Farhad Radpour
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Paper Abstract

In this paper, a new quantum-well IR photodetector based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8 to 12 micrometers range, and in the lower dark current.

Paper Details

Date Published: 2 June 1994
PDF: 12 pages
Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); doi: 10.1117/12.177144
Show Author Affiliations
Patamaporn Keshagupta, Univ. of Cincinnati (United States)
Farhad Radpour, Univ. of Cincinnati (United States)


Published in SPIE Proceedings Vol. 2145:
Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion
Nasser Peyghambarian; Robert C. Eckardt; Nasser Peyghambarian; Henry Everitt; Dennis D. Lowenthal; Henry Everitt; Robert C. Eckardt; Dennis D. Lowenthal, Editor(s)

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