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Proceedings Paper

Nonlinear optics of quantum dot and quantum wire structures
Author(s): Victor I. Klimov; V. S. Dneprovskii; V. A. Karavanskii
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Paper Abstract

Changes in the transmission of commercially available semiconductor doped glasses and porous silicon layers are studied by using picosecond pump and probe measurements. Bleaching bands attributed to the saturation of optical transitions in semiconductor nanostructures (crystallites or wires) are registered in time-resolved differential transmission spectra for both of the materials under investigation. It is found that porous silicon exhibits strong and fast optical nonlinearity (third-order nonlinear susceptibility is about 10-s esu; transmission recovery time is 30 - 40 ps) which can be used for optical switching.

Paper Details

Date Published: 2 June 1994
PDF: 10 pages
Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); doi: 10.1117/12.177134
Show Author Affiliations
Victor I. Klimov, RWTH Aachen (Russia)
V. S. Dneprovskii, Moscow State Univ. (Russia)
V. A. Karavanskii, Institute for General Physics (Russia)

Published in SPIE Proceedings Vol. 2145:
Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion
Nasser Peyghambarian; Robert C. Eckardt; Nasser Peyghambarian; Henry Everitt; Dennis D. Lowenthal; Henry Everitt; Robert C. Eckardt; Dennis D. Lowenthal, Editor(s)

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