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Proceedings Paper

Characterization of semiconductor device structures by modulation spectroscopy
Author(s): Hao Qiang; Dong Yan; Yichun Yin; Fred H. Pollak
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Paper Abstract

This paper reviews the use of modulation spectroscopy for the characterization of a wide variety of semiconductor device structures. Some systems that will be discussed include pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum-well high-electron-mobility transistors (including the 300K determination of the 2D electron gas density), GaAlAs/GaAs, InP/InGaAs, InGaP/GaAs, InAlAs/InGaAs, and InGaAs/GaAs heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions), GaAs/GaAlAs quantum well IR detectors, quantum well lasers, etc. Particular attention will be paid to nondestructive, contactless techniques such as photoreflectance and contactless electroreflectance that can be performed on entire wafers.

Paper Details

Date Published: 26 May 1994
PDF: 12 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176859
Show Author Affiliations
Hao Qiang, CUNY/Brooklyn College (United States)
Dong Yan, CUNY/Brooklyn College (United States)
Yichun Yin, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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