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Proceedings Paper

Optical determination of (partial) ordering in ordered alloys
Author(s): Judah Ari Tuchman; Orest J. Glembocki; Roger Sillmon; E. R. Glaser; M. E. Twigg
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Paper Abstract

The joint effects of (partial) ordering and biaxial strain due to lattice mismatch are considers for GaInP2 epilayers grown by organometallic vapor phase epitaxy. on (001) GaAs substrates. Using polarization dependent electromodulation spectroscopy, lattice-matched and moderately mismatched sample of varying degrees of order are characterized in terms of shifted bandgaps, valence band splittings, and the appearance of new, high-energy features that are associated with zone-folded transitions due to a reduction in symmetry of the crystal. Transition energies and selection rules are identified with theoretical estimates tempered by the joint effects of incomplete or partial ordering and biaxial strain due to lattice mismatch. The effects of ordering are also considered in relation to Raman scattering, where it is shown that polarization dependent lineshape anomalies are associated with zone-folded modes, again due to the new (transformed) crystal symmetry.

Paper Details

Date Published: 26 May 1994
PDF: 11 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176857
Show Author Affiliations
Judah Ari Tuchman, Naval Research Lab. (United States)
Orest J. Glembocki, Naval Research Lab. (United States)
Roger Sillmon, Naval Research Lab. (United States)
E. R. Glaser, Naval Research Lab. (United States)
M. E. Twigg, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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