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Proceedings Paper

Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires
Author(s): Frank Kieseling; P. Ils; M. Michel; Alfred W. B. Forchel; I. Gyuro; M. Klenk; E. Zielinski
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Paper Abstract

We have developed In0.53Ga0.47As/InP quantum wires with lateral widths down to 8 nm by high-resolution electron beam lithography and deep wet chemical etching. The wires were studied by cw- and time-resolved photoluminescence spectroscopy at temperatures of 2 K and 11 K respectively. Even from the narrowest obtained wire structures we observe a clear photoluminescence signal.

Paper Details

Date Published: 26 May 1994
PDF: 8 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176855
Show Author Affiliations
Frank Kieseling, Univ. Wuerzburg (Germany)
P. Ils, Univ. Wuerzburg (Germany)
M. Michel, Univ. Wuerzburg (Germany)
Alfred W. B. Forchel, Univ. Wuerzburg (Germany)
I. Gyuro, Alcatel-SEL (Germany)
M. Klenk, Alcatel-SEL (Germany)
E. Zielinski, Alcatel-SEL (Germany)

Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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