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Proceedings Paper

Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain
Author(s): Hongen Shen; Michael Wraback; Jagadeesh Pamulapati; Monica Alba Taysing-Lara; Weimin Zhou; Mitra B. Dutta; Yu Cun Lu; Haochung Kuo
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Paper Abstract

Lift-off thin films of GaAs/AlGaAs multiple quantum wells (MQW) have been bonded to different transparent substrates that possess either direction-independent or direction-dependent thermal expansion. Duet to the differential thermal expansion between the thin film and the much thicker substrate, the MQW is under a thermally induced in-plane strain. By proper choice of the substrate crystallographic orientation and bonding temperature various forms of in-plane anisotropic strain have been realized. A detailed study of the anisotropy in the complex refractive index resulting from the in-plane anisotropic strain is presented. The electric field dependence of the anisotropic absorption and birefringence has also been studied.

Paper Details

Date Published: 26 May 1994
PDF: 7 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176853
Show Author Affiliations
Hongen Shen, U.S. Army Research Lab. and Geo Centers, Inc. (United States)
Michael Wraback, U.S. Army Research Lab. (United States)
Jagadeesh Pamulapati, U.S. Army Research Lab. (United States)
Monica Alba Taysing-Lara, U.S. Army Research Lab. (United States)
Weimin Zhou, U.S. Army Research Lab. (United States)
Mitra B. Dutta, U.S. Army Research Lab. (United States)
Yu Cun Lu, Rutgers Univ. (United States)
Haochung Kuo, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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