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Proceedings Paper

Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields
Author(s): Udo Behn; Holger T. Grahn; Klaus H. Ploog
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Paper Abstract

Electroreflectance (ER) and photocurrent spectra of a strongly and a weakly coupled GaAs- AlAs superlattice are investigated in the Wannier-Stark regime. It is shown that both types of spectra can only be described satisfactorily when, in addition to the excitonic transitions of the first heavy and light hole subband with the first conduction subband, band-to-band transition are taken into account. Therefore, a total of four rather just the two excitonic transitions are necessary to fit the experimental ER spectra. Finally, to describe all features in the ER spectra, interferences within the layered structure have to be included.

Paper Details

Date Published: 26 May 1994
PDF: 10 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176852
Show Author Affiliations
Udo Behn, Fachhochschule Schmalkalden (Germany)
Holger T. Grahn, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
Klaus H. Ploog, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)

Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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