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Proceedings Paper

Characterization of very thin MBE-grown Ge epilayers on (001) Si
Author(s): Wolfgang Kissinger; Hans Joerg Osten; G. Lippert; Burghard Dietrich; Eberhard Bugiel
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Paper Abstract

The preparation of atomically sharp interfaces for the Si-Ge system is of remarkable interest for the preparation of ultrathin layers and superlattices. We investigated the influence of the molecular beam epitaxy (MBE) growth conditions on the properties of five monolayers of germanium embedded in a (001) silicon matrix for a conventional as well as an antimony- mediated growth in the temperature region from 300 degree(s)C to 450 degree(s)C. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy (TEM); they show corresponding results for all three methods of investigation.

Paper Details

Date Published: 26 May 1994
PDF: 11 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176847
Show Author Affiliations
Wolfgang Kissinger, Institute of Semiconductor Physics (Germany)
Hans Joerg Osten, Institute of Semiconductor Physics (Germany)
G. Lippert, Institute of Semiconductor Physics (Germany)
Burghard Dietrich, Institute of Semiconductor Physics (Germany)
Eberhard Bugiel, Institute of Semiconductor Physics (Germany)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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