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Proceedings Paper

Use of optical characterization for optimization of epitaxial growth
Author(s): Gary W. Wicks
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Paper Abstract

Optical spectroscopies of semiconductor crystals can be very useful for the optimization of epitaxial growth. This paper discusses two of the most useful optical measurements, photoluminescence and Raman spectroscopy, and their applications to III-IV epitaxial structures grown by molecular beam epitaxy and organo-metallic vapor phase epitaxy.

Paper Details

Date Published: 26 May 1994
PDF: 9 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176846
Show Author Affiliations
Gary W. Wicks, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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