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Proceedings Paper

Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces
Author(s): Lutz Daeweritz; Richard Noetzel; Klaus H. Ploog
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Paper Abstract

Semiconductor surfaces develop orientation dependent morphologies during growth that can be used for fabrication of nanostructured materials. We have applied RHEED techniques to study during MBE the nanometer-scale morphologies on non-(001)-oriented GaAs surfaces and their evolution during heterogeneous deposition of AlAs. In particular, the growth behavior of the GaAs(311)Ga surface enables a controlled generation of an ordered surface corrugation. We report on two new methods for a direct synthesis of 1D structures that take advantage of an in- situ lateral patterning of the GaAs substrate: the growth of corrugated GaAs/AlAs heterostructures on the GaAs(311)Ga surface and the synthesis of doping wires by the combination lattice step growth on vicinal GaAs(001) surfaces with planar doping.

Paper Details

Date Published: 26 May 1994
PDF: 12 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176845
Show Author Affiliations
Lutz Daeweritz, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
Richard Noetzel, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Klaus H. Ploog, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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