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Proceedings Paper

Photoreflectance study of the chemically modified (100) GaAs surface
Author(s): Orest J. Glembocki; Judah Ari Tuchman; K. K. Ko; Stella W. Pang; John A. Dagata; Adriana Giordana; R. Kaplan; Charles Ed Stutz
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Paper Abstract

Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified 9100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl2 plasma generated by an electro-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to in the Fermi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

Paper Details

Date Published: 26 May 1994
PDF: 7 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176843
Show Author Affiliations
Orest J. Glembocki, Naval Research Lab. (United States)
Judah Ari Tuchman, Naval Research Lab. (United States)
K. K. Ko, Univ. of Michigan (United States)
Stella W. Pang, Univ. of Michigan (United States)
John A. Dagata, National Institute of Standards and Technology (United States)
Adriana Giordana, Naval Research Lab. (United States)
R. Kaplan, Naval Research Lab. (United States)
Charles Ed Stutz, Air Force Wright Lab. (United States)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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