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Proceedings Paper

Characterization of a 4Kx2K three-side buttable CCD
Author(s): Richard J. Stover; William E. Brown; David Kirk Gilmore; Mingzhi Wei
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Paper Abstract

Results are presented on the fabrication and characterization of a 4Kx2K three-side buttable CCD produced by Orbit Semiconductor, a silicon foundry in San Jose, California. This first run of wafers was produced to test the ability of Orbit to produce high quality scientific CCDs with the characteristics required for detectors to be used in optical instruments of the Keck Observatory. Also on the wafer are two 2Kx2K devices. Similar devices have been fabricated for us by Loral/Fairchild. Extensive characterization of the Loral devices has taken place over the past few years, so interest is high about the possibility that Orbit might become a second source for similar detectors. This paper presents the first results on the 4Kx2K CCDs, and those preliminary results include measurements of charge transfer efficiency, low-temperature dark current, on-chip amplifier read- out noise, localized charge traps, full well, and responsive quantum efficiency.

Paper Details

Date Published: 1 June 1994
PDF: 7 pages
Proc. SPIE 2198, Instrumentation in Astronomy VIII, (1 June 1994); doi: 10.1117/12.176779
Show Author Affiliations
Richard J. Stover, UCO/Lick Observatory (United States)
William E. Brown, UCO/Lick Observatory (United States)
David Kirk Gilmore, UCO/Lick Observatory (United States)
Mingzhi Wei, UCO/Lick Observatory (United States)


Published in SPIE Proceedings Vol. 2198:
Instrumentation in Astronomy VIII
David L. Crawford; Eric R. Craine, Editor(s)

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