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Proceedings Paper

Delta-doped CCDs: high QE with long-term stability at UV and visible wavelengths
Author(s): Shouleh Nikzad; Michael E. Hoenk; Paula J. Grunthaner; Robert W. Terhune; Frank J. Grunthaner; Rusty Winzenread; Masoud M. Fattahi; Hsin-Fu Tseng; Michael P. Lesser
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Paper Abstract

Delta-doped CCDs, developed at JPL's Microdevices Laboratory, have achieved stable 100% internal quantum efficiency in the visible and near UV regions of the spectrum. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited on the surface, followed by a 15 $angstrom silicon layer for surface passivation. The boron is nominally incorporated within a single atomic layer at the back surface of the device, resulting in the effective elimination of the backside potential well. The measured quantum efficiency is in good agreement with the theoretical limit imposed by reflection from the Si surface. Enhancement of the total quantum efficiency in the blue visible and near UV has been demonstrated by depositing antireflection coatings on the delta-doped CCD. Recent results on antireflection coatings and quantum efficiency measurements are discussed.

Paper Details

Date Published: 1 June 1994
PDF: 9 pages
Proc. SPIE 2198, Instrumentation in Astronomy VIII, (1 June 1994); doi: 10.1117/12.176733
Show Author Affiliations
Shouleh Nikzad, Jet Propulsion Lab. (United States)
Michael E. Hoenk, Jet Propulsion Lab. (United States)
Paula J. Grunthaner, Jet Propulsion Lab. (United States)
Robert W. Terhune, Jet Propulsion Lab. (United States)
Frank J. Grunthaner, Jet Propulsion Lab. (United States)
Rusty Winzenread, EG&G Reticon (United States)
Masoud M. Fattahi, EG&G Reticon (United States)
Hsin-Fu Tseng, EG&G Reticon (United States)
Michael P. Lesser, Univ. of Arizona Steward Observatory (United States)


Published in SPIE Proceedings Vol. 2198:
Instrumentation in Astronomy VIII
David L. Crawford; Eric R. Craine, Editor(s)

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