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Proceedings Paper

Effect of zinc diffusion on the device performance of semi-insulating buried crescent lasers
Author(s): Ching Long Jiang; Maria D. Ferreira; Robert J. Miller; Mark Mashas; Mark Soler; Keith Wilder; Eugene A. Imhoff; John D. Kulick; Randy Wilson
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Paper Abstract

The effect of zinc diffusion on the device performance of semi-insulating buried crescent (SIBC) lasers was analyzed by electron beam induced current and scanning electron microscope techniques. A novel liquid phase epitaxy regrowth technique has been developed to minimize the zinc diffusion into the iron-doped semi-insulating indium phosphide blocking layer. This technique has been demonstrated to improve the device performance of SIBC lasers.

Paper Details

Date Published: 1 June 1994
PDF: 11 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176628
Show Author Affiliations
Ching Long Jiang, AMP Inc. (United States)
Maria D. Ferreira, AMP Inc. (United States)
Robert J. Miller, AMP Inc. (United States)
Mark Mashas, AMP Inc. (United States)
Mark Soler, AMP Inc. (United States)
Keith Wilder, AMP Inc. (United States)
Eugene A. Imhoff, AMP Inc. (United States)
John D. Kulick, AMP Inc. (United States)
Randy Wilson, AMP Inc. (United States)


Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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