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Proceedings Paper

Refractory contact lasers
Author(s): Patrik A. Evaldsson; Geoffrey W. Taylor; Timothy A. Vang; M. Mirovic; Roger J. Malik
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Paper Abstract

In this paper we discuss the effects of incorporating carbon doping in semiconductor lasers. Data is presented that demonstrates that very high quality carbon doped epilayers for the fabrication of AlGaAs-GaAs and AlGaAs-GaAs-InGaAs quantum well lasers can be grown by solid source molecular beam epitaxy using a resistively heated graphite filament as a p-type dopant source. Also results are presented that indicate that the use of carbon instead of beryllium improves the contact resistance for refractory ohmic contacts.

Paper Details

Date Published: 1 June 1994
PDF: 9 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176627
Show Author Affiliations
Patrik A. Evaldsson, AT&T Bell Labs. (Sweden)
Geoffrey W. Taylor, AT&T Bell Labs. (United States)
Timothy A. Vang, AT&T Bell Labs. (United States)
M. Mirovic, AT&T Bell Labs. (United States)
Roger J. Malik, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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