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Proceedings Paper

Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes
Author(s): Nikolay I. Katsavets; Dmitry Z. Garbuzov; T. A. Grishina; Irena E. Kudrik; Petr V. Pitkianen
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Paper Abstract

We studied local facet temperature near the active region of high power SCH SQW InGaAsP/GaAs (0.8 micrometers ) and InGaAs/GaAs (0.98 micrometers ) laser diodes (LD) along with their optical and degradational characteristics. It was shown that facet overheating with respect to the bulk temperature of the LD for current densities J < 2000 A/cm2 was due to the absorption of intrinsic radiation of the LD and nonradiative recombination of nonequilibrium carriers at the mirror facets, while for J > 2000 A/cm2 facet overheating connected with the surface leakage current was observed. Either mechanism may dominate in limiting the maximum optical power as well as increase the degradation rate of the LD.

Paper Details

Date Published: 1 June 1994
PDF: 5 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176609
Show Author Affiliations
Nikolay I. Katsavets, A.F. Ioffe Physical-Technical Institute (Russia)
Dmitry Z. Garbuzov, A.F. Ioffe Physical-Technical Institute (Russia)
T. A. Grishina, A.F. Ioffe Physical-Technical Institute (Russia)
Irena E. Kudrik, A.F. Ioffe Physical-Technical Institute (Russia)
Petr V. Pitkianen, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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