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Proceedings Paper

Temporal evolution of the dense electron-hole plasma phase in GaAs quantum wires
Author(s): Roberto Cingolani; R. Rinaldi; Michele Ferrara; Giuseppe C. La Rocca; Herbert Lage; Detlef Heitmann; H. Kalt
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Paper Abstract

We report a spectroscopic investigation of the stationary and transient recombination processes in rectangular GaAs quantum well-wires. The ground level exciton states are studied by linear and non linear photoluminescence excitation spectroscopy, providing information on the one-dimensional exciton binding energy and on the actual band gap edge of the wires. The carrier density dependence and the temporal evolution of the band gap renormalization in GaAs quantum wires have been determined by a line-shape analysis of the time resolved electron-hole plasma luminescence. The obtained data are compared with recent theoretical calculations.

Paper Details

Date Published: 6 May 1994
PDF: 11 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175916
Show Author Affiliations
Roberto Cingolani, Univ. di Lecce (Italy)
R. Rinaldi, Univ. di Bari (Italy)
Michele Ferrara, Univ. di Bari (Italy)
Giuseppe C. La Rocca, Scuola Normale Superiore (Italy)
Herbert Lage, Tele Danmark Research (United Kingdom)
Detlef Heitmann, Institut fuer Angewandte Physik (Germany)
H. Kalt, Univ. Kaiserslautern (Germany)


Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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