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Proceedings Paper

Ultrafast exciton dynamics in direct gap semiconductors
Author(s): Jorn M. Hvam; John Erland; K.-H. Pantke
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Paper Abstract

Dynamics of free and bound excitons in CdSe, localized excitons in CdSexS1-x, and confined two-dimensional excitons in GaAs/AlGaAs quantum wells have been studied by degenerate four-wave mixing and light-induced grating experiments. In the coherent range, the dephasing of excitons has been determined as a function of temperature, density, and energy. For incoherent excitons, we have determined recombination lifetimes and diffusion coefficients. In particular, we have studied the mobility of excitons in CdSexS1-x near the mobility edge. Quantum interferences are observed in the nonlinear signal from these exciton systems, and the nature of these four-wave mixing beats are being discussed.

Paper Details

Date Published: 6 May 1994
PDF: 19 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175910
Show Author Affiliations
Jorn M. Hvam, Technical Univ. of Denmark and Odense Univ. (Denmark)
John Erland, Odense Univ. (Denmark)
K.-H. Pantke, Odense Univ. (Germany)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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