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Proceedings Paper

Investigation of kinetics of photoconductivity in PbTe(Ga) under ultrashort-pulse laser excitation
Author(s): Oleg B. Mavritsky; Alexander I. Lebedev; Irina A. Sluchinskaya
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Paper Abstract

Relaxation of photoconductivity (PC) in Ga-doped PbTe under picosecond pulse excitation was investigated in the temperature range of 77 - 200 K. Processes of nano-, micro-, and millisecond time scale were observed depending on excitation level and temperature. At 160 K PC response shortened up to 1 ns making it possible to resolve single pulses of picosecond pulse train. Studies of temperature dependence of PC lifetime revealed additional low- frequency process (far less 800 Hz) which was closely connected to long-term relaxation of PC at low temperatures. The two-level model was shown to explain qualitatively main PC processes observed in PbTe(Ga) crystals.

Paper Details

Date Published: 6 May 1994
PDF: 9 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175907
Show Author Affiliations
Oleg B. Mavritsky, Moscow Engineering Physics Institute (Russia)
Alexander I. Lebedev, Moscow State Univ. (Russia)
Irina A. Sluchinskaya, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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