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Proceedings Paper

Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields
Author(s): Joachim H. Wolter; Jos E. M. Haverkort; Peter Hendriks; E. A. E. Zwaal
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Paper Abstract

At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the AlxGa1-xAs, injection of electrons from the contacts into the AlxGa1-xAs layer opens a conductive channel in the AlxGa1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the AlxGa1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

Paper Details

Date Published: 6 May 1994
PDF: 18 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175901
Show Author Affiliations
Joachim H. Wolter, Eindhoven Univ. of Technology (Netherlands)
Jos E. M. Haverkort, Eindhoven Univ. of Technology (Netherlands)
Peter Hendriks, Eindhoven Univ. of Technology (Netherlands)
E. A. E. Zwaal, Eindhoven Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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