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Proceedings Paper

Femtosecond relaxation of highly photo-excited carriers in GaAs
Author(s): N. Nintunze; Mohamed A. Osman
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Paper Abstract

Ultrafast relaxation of photo-excited electrons in p-doped and intrinsic GaAs has been investigated using the Monte Carlo method. Dynamic screening of the carrier-carrier (c-c) interaction has been implemented using a momentum and frequency dependent dielectric function. Compared to the static c-c scattering model, the current approach results in faster cooling of the electron-hole plasma, due to enhanced carrier-carrier scattering rates. In p- GaAs, the energy relaxation shows that the electron-hole plasma (EHP) cools faster with increasing hole concentration. The transient luminescence intensity and the effective carrier temperature computed from luminescence spectra compare favorably with experimental data.

Paper Details

Date Published: 6 May 1994
PDF: 8 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175900
Show Author Affiliations
N. Nintunze, Washington State Univ. (United States)
Mohamed A. Osman, Washington State Univ. (United States)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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