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Proceedings Paper

New results on thermalization of electrons in GaAs
Author(s): Reinhard M. Hannak; Wolfgang W. Ruehle
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Paper Abstract

The transition from a nonthermal into a thermal distribution of electrons at low densities (< 1014 cm-3) is traced on a picosecond time-scale by the time evolution of a band-to-acceptor transition in GaAs:Be. Two narrow, nonthermal electron distributions are detected during the first picoseconds originating from the heavy- and light-hole valence band, respectively. Measurements with circular polarization of excitation and luminescence confirm this assignment. The variation of their energetic peak-positions with excitation energy allows the experimental determination of the valence band dispersions for very small wave vectors near k equals 0, where only parabolic energy terms contribute to the dispersions. The results are consistent with the commonly used effective hole masses.

Paper Details

Date Published: 6 May 1994
PDF: 9 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175896
Show Author Affiliations
Reinhard M. Hannak, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Wolfgang W. Ruehle, Max-Planck-Institut fuer Festkoerperforschung (Germany)


Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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