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Proceedings Paper

Electron-hole correlations in the subpicosecond dynamics of the electron-hole plasma in GaAs
Author(s): Jacques H. Collet; J. L. Iehl; R. Grac
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Paper Abstract

Electron-hole correlations play an important role for understanding the conditions of thermalization and the optical properties of the electron-hole plasma (EHP) in the subpicosecond regime. We first discuss the consideration of the dynamic screening in the framework of Boltzmann's transport equations. Carrier-carrier scattering rates are computed and compared for different approximations. We show that the dynamic screening significantly increases the electron-electron collision rate. Then we discuss the variation of the absorption coefficient in the presence of a non-thermalized EHP. We show that the change of the electron-hole correlations induces a small oscillation of the absorption around the excitation energy.

Paper Details

Date Published: 6 May 1994
PDF: 15 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175895
Show Author Affiliations
Jacques H. Collet, Lab. d'Automatique et d'Analyse des Systems du CNRS (France)
J. L. Iehl, Lab. d'Automatique et d'Analyse des Systems du CNRS (France)
R. Grac, Lab. d'Automatique et d'Analyse des Systems du CNRS (France)


Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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