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Proceedings Paper

Ensemble Monte Carlo simulation of Raman scattering in GaAs
Author(s): Selim E. Guencer; David K. Ferry
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Paper Abstract

A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the (Gamma) conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 X 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

Paper Details

Date Published: 6 May 1994
PDF: 8 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175888
Show Author Affiliations
Selim E. Guencer, Middle East Technical Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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