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Proceedings Paper

Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors
Author(s): Y. Kostoulas; Ting Gong; Bradford C. Tousley; Gary W. Wicks; Paul W. Cooke; Philippe M. Fauchet
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Paper Abstract

We report systematic studies of the femtosecond transient reflectivity and transmission in low- temperature-grown III-V semiconductors. By using a 2-eV-pump/white-light-probe system as well as a tunable infrared laser we are able to investigate different materials and shed new light on the processes governing the photoexcited carrier dynamics in these compounds.

Paper Details

Date Published: 6 May 1994
PDF: 10 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175881
Show Author Affiliations
Y. Kostoulas, Univ. of Rochester (United States)
Ting Gong, Univ. of Rochester (United States)
Bradford C. Tousley, U.S. Military Academy/West Point (United States)
Gary W. Wicks, Univ. of Rochester (United States)
Paul W. Cooke, U.S. Army Electronic Technology Device Lab. (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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