Share Email Print
cover

Proceedings Paper

Transient relaxation dynamics in AlxGa1-xAs III-V compound semiconductor
Author(s): Yingbin Zhai; Yibin Zhang; Shuicai Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Based on the theory of time-resolved spectrum, a time-resolved optical system is set up with analysis to this optical system in this paper. A detailed discrn;sion is made to the experimental structure on this system, dealing with the non--Jinear opticul phenomena and the light absorption saturation of Al=Ga:J.-xAs compound semiconductor within different x values. Our conclusion is that the electrons scattering in conduction band are due to the interaction between electrons and photons, phonons,defects and ionized impurities, whereas the interaction between electrons and phonons decreases the relative intensity of absorption of photons by electrons. 'fhe slow attenuation process contains various recombination mechanisms, with a relaxation process of about 200 ps.

Paper Details

Date Published: 16 May 1994
PDF: 6 pages
Proc. SPIE 2116, Generation, Amplification, and Measurement of Ultrashort Laser Pulses, (16 May 1994); doi: 10.1117/12.175876
Show Author Affiliations
Yingbin Zhai, Xidian Univ. (China)
Yibin Zhang, Shanghai Jiao Tong Univ. (China)
Shuicai Wang, Xi'an Institute of Optics and Precision Mechanics (China)


Published in SPIE Proceedings Vol. 2116:
Generation, Amplification, and Measurement of Ultrashort Laser Pulses
Rick P. Trebino; Ian A. Walmsley, Editor(s)

© SPIE. Terms of Use
Back to Top