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Proceedings Paper

X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices
Author(s): Ramez Nachman; Gong Chen; Michael T. Reilly; Gregory M. Wells; John P. Wallace; Hsin H. Li; Azalia A. Krasnoperova; Paul D. Anderson; Eric Brodsky; Eti Ganin; Stephen A. Campbell; James Welch Taylor; Franco Cerrina
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Paper Abstract

In this paper we present the activities at the Center for X-ray Lithography (CXrL) that are dedicated to applying x-ray lithography to 0.25 micrometers processing. We first present the results of optimizing the parameters of the x-ray resist, AZ-PF 514, to achieve 0.25 micron features with variations of less than 10%; second, we discuss the properties of an exposure station (ES3) that feeds the in-house built aligner; third, we present the novel in-house built Two State Aligner (TSA) and its ability to achieve < 32 nm registration error; fourth, we present a developed fabrication process that produces masks with the required membrane stress, optical transparency, and mask flatness; and finally, we present the integration of all the above subprocesses by showing preliminary results from the in-progress 0.25 micrometers NMOS device run. The requirements and results of each sub-process are discussed and judged according to the 0.25 micrometers error budget goals that were initially set for 1997.

Paper Details

Date Published: 13 May 1994
PDF: 13 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175835
Show Author Affiliations
Ramez Nachman, Univ. of Wisconsin/Madison (United States)
Gong Chen, Univ. of Wisconsin/Madison (United States)
Michael T. Reilly, Univ. of Wisconsin/Madison (United States)
Gregory M. Wells, Univ. of Wisconsin/Madison (United States)
John P. Wallace, Univ. of Wisconsin/Madison (United States)
Hsin H. Li, Univ. of Wisconsin/Madison (United States)
Azalia A. Krasnoperova, Univ. of Wisconsin/Madison (United States)
Paul D. Anderson, Univ. of Wisconsin/Madison (United States)
Eric Brodsky, Univ. of Wisconsin/Madison (United States)
Eti Ganin, IBM Corp. (United States)
Stephen A. Campbell, Univ. of Minnesota/Minneapolis-St. Paul (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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