Share Email Print
cover

Proceedings Paper

X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices
Author(s): Ramez Nachman; Gong Chen; Michael T. Reilly; Gregory M. Wells; John P. Wallace; Hsin H. Li; Azalia A. Krasnoperova; Paul D. Anderson; Eric Brodsky; Eti Ganin; Stephen A. Campbell; James Welch Taylor; Franco Cerrina
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we present the activities at the Center for X-ray Lithography (CXrL) that are dedicated to applying x-ray lithography to 0.25 micrometers processing. We first present the results of optimizing the parameters of the x-ray resist, AZ-PF 514, to achieve 0.25 micron features with variations of less than 10%; second, we discuss the properties of an exposure station (ES3) that feeds the in-house built aligner; third, we present the novel in-house built Two State Aligner (TSA) and its ability to achieve < 32 nm registration error; fourth, we present a developed fabrication process that produces masks with the required membrane stress, optical transparency, and mask flatness; and finally, we present the integration of all the above subprocesses by showing preliminary results from the in-progress 0.25 micrometers NMOS device run. The requirements and results of each sub-process are discussed and judged according to the 0.25 micrometers error budget goals that were initially set for 1997.

Paper Details

Date Published: 13 May 1994
PDF: 13 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175835
Show Author Affiliations
Ramez Nachman, Univ. of Wisconsin/Madison (United States)
Gong Chen, Univ. of Wisconsin/Madison (United States)
Michael T. Reilly, Univ. of Wisconsin/Madison (United States)
Gregory M. Wells, Univ. of Wisconsin/Madison (United States)
John P. Wallace, Univ. of Wisconsin/Madison (United States)
Hsin H. Li, Univ. of Wisconsin/Madison (United States)
Azalia A. Krasnoperova, Univ. of Wisconsin/Madison (United States)
Paul D. Anderson, Univ. of Wisconsin/Madison (United States)
Eric Brodsky, Univ. of Wisconsin/Madison (United States)
Eti Ganin, IBM Corp. (United States)
Stephen A. Campbell, Univ. of Minnesota/Minneapolis-St. Paul (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

© SPIE. Terms of Use
Back to Top