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Proceedings Paper

Alignment accuracy improvement by consideration of wafer processing impacts
Author(s): Klaus Simon; H.-U. Scheunemann; Hans L. Huber; P. Kaiser
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Paper Abstract

To further improve the performance of alignment systems for high resolution lithographic exposure systems, the various contributions to the overall alignment accuracy must be identified and separately reduced. We have measured the contributions to the performance of the ALX100 alignment system of the SUSS XRS200 x-ray stepper emerging from recognition repeatability, focus setting, and gap setting. We have found asymmetric alignment profiles during the alignment of a metal-layer process wafer combined with stepfield dependent offsets. After modification of the signal evaluation the stepfield dependent offset was largely reduced and the performance increased.

Paper Details

Date Published: 13 May 1994
PDF: 10 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175826
Show Author Affiliations
Klaus Simon, Fraunhofer-Institut fuer Siliziumtechnologie (Germany)
H.-U. Scheunemann, Fraunhofer-Institut fuer Siliziumtechnologie (Germany)
Hans L. Huber, Fraunhofer-Institut fuer Siliziumtechnologie (Germany)
P. Kaiser, Karl Suss KG (Germany)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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