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Proceedings Paper

Chemically amplified negative resist for e-beam fabrication of x-ray masks
Author(s): Ahmad D. Katnani; Janet M. Rocque; Ranee W. Kwong; Denise M. Puisto; Donald K. Bailey
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Paper Abstract

We are reporting on a chemically amplified negative-tone resist developed at IBM. The resist consists of three components: novolac resin, photoacid generator, and crosslinker. The resist is sensitive to DUV, e-beam, and x ray. However, this paper focuses on the e-beam application oriented toward x-ray mask fabrication. The mask process includes post-apply and post-exposure bake of membranes in a convention oven. The exposure was completed in an IBM EL-3+ system equipped with a variable axis immersion lens (VAIL). The membranes were developed in an APT processor with 0.03 N TMAH employing an interrupt develop process. The resist sensitivity ranged from 5 to 10 (mu) C/cm2 depending on the resist formulation and the process parameters. The contrast was found to be greater than 5.

Paper Details

Date Published: 13 May 1994
PDF: 12 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175821
Show Author Affiliations
Ahmad D. Katnani, IBM Corp. (United States)
Janet M. Rocque, IBM Corp. (United States)
Ranee W. Kwong, IBM Corp. (United States)
Denise M. Puisto, IBM Corp. (United States)
Donald K. Bailey, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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