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Proceedings Paper

Improved proximity correction algorithm for electron-beam lithography
Author(s): Wu Lu; Hao-Ying Shen; Jingxin X. Tao; Ning Gu; Yu Wei
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Paper Abstract

An improved proximity effect correction method based on pattern division, which attempts to correct both for inter- and for intra-shape proximity effects, is proposed. The experimental results suggest that the algorithm has good convergence, fast data processing speed, and good correction effects. Compared with the method based on transform, our approach has apparent better correction effects.

Paper Details

Date Published: 13 May 1994
PDF: 8 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175820
Show Author Affiliations
Wu Lu, Southeast Univ. (China)
Hao-Ying Shen, Nanjing Electronic Device Institute (China)
Jingxin X. Tao, Southeast Univ. (China)
Ning Gu, Southeast Univ. (China)
Yu Wei, Southeast Univ. (China)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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