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Proceedings Paper

Pulsed electron-beam source for high-resolution high-throughput microlithography
Author(s): Tseng-Yang Hsu; Peyman Hadizad; Rong Lin Liou; Greg Roth; Martin A. Gundersen
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Paper Abstract

Research and development of a broad area (> 1 cm diameter), high brightness (approximately 107 A/cm2 rad2), high current density (> 50 A/cm2), pulsed electron beam source for high throughput, high resolution (< 0.25 micrometers ) lithography is reported. This novel electron beam source is simple, robust, will cost significantly less than direct write electron beam systems, and allows for high throughput pattern generation (> 30 2 - 3 inch wafers/hr). The electron beam is produced by the back-lighted thyratron (BLT) and is transported through a dielectric tube to achieve focusing and collimation. Replication of 10 $,mum line structures in PMMA using a nickel grid mask has been achieved. At present, masks comprised of diamond thin film (1 - 15 micrometers ) membranes on a silicon substrate are being fabricated to study the replication of submicrometer structures in PMMA. In this case, of primary importance are mask heating and deformation.

Paper Details

Date Published: 13 May 1994
PDF: 7 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175813
Show Author Affiliations
Tseng-Yang Hsu, Univ. of Southern California (United States)
Peyman Hadizad, Univ. of Southern California (United States)
Rong Lin Liou, Univ. of Southern California (United States)
Greg Roth, Univ. of Southern California (United States)
Martin A. Gundersen, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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