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Proceedings Paper

Spectral effects on x-ray lithography
Author(s): Whitson G. Waldo; Azalia A. Krasnoperova; Mumit Khan; Cristiano Capasso; James Welch Taylor; Franco Cerrina
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Paper Abstract

The actinic spectra of two beamlines of the University of Wisconsin's Center for X-ray Lithography (CXrL) at the Aladdin storage ring were studied in three configurations. Some beamlines optimized for particular bandwidths are presented and their impact on mask making, aerial image quality, printed image quality, and device damage discussed. Resist performance dependence on the actinic spectrum is investigated. The exposure-gap tree response of 0.25 micron features is presented for different spectra. Resist characteristic curve data were collected for these conditions and are compared.

Paper Details

Date Published: 13 May 1994
PDF: 15 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175798
Show Author Affiliations
Whitson G. Waldo, Motorola Inc. (United States)
Azalia A. Krasnoperova, Univ. of Wisconsin/Madison (United States)
Mumit Khan, Univ. of Wisconsin/Madison (United States)
Cristiano Capasso, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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