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Proceedings Paper

Piezoactive (110)- and (h11)-InAs/GaAs heterostructures for nonlinear optical applications
Author(s): Matthias Ilg; Klaus H. Ploog; Achim Trampert
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Paper Abstract

We investigate the optical properties of (h11) and (110) InAs/GaAs heterostructures with built- in piezoelectrical fields. In both cases we find that the lateral structure of the quantum wells can decisively enhance the impact of the internal electric fields on their optical properties. In the first case this is due to the local screening of piezoelectric fields. In the second case it is the result of artificially introduced lateral piezofields. Both concepts open the way to a new class of semiconductor heterostructures with strong optical nonlinearities.

Paper Details

Date Published: 11 May 1994
PDF: 9 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175788
Show Author Affiliations
Matthias Ilg, Paul-Drude-Institut fur Festkorperelektronik (Germany)
Klaus H. Ploog, Paul-Drude-Institut fur Festkorperelektronik (Germany)
Achim Trampert, Max-Planck-Institut fur Festkorperforschung (Germany)


Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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