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Proceedings Paper

Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures
Author(s): L. He; Donald C. Grillo; Jung Han; Yongping Fan; Mike D. Ringle; S. M. Clark; Robert L. Gunshor; Heonsu Jeon; A. Salokatve; Arto V. Nurmikko; Guo-Chun Hua; Nobuo Otsuka
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Paper Abstract

We report the molecular beam epitaxial growth of the quaternary (Zn,Mg)(S,Se) compound as well as the incorporation of this quaternary into a pseudomorphic SCH blue-green laser diode configuration. X ray diffraction and TEM imaging indicate that the quaternary (Zn,Mg)(S,Se) can accommodate substantially more strain than the binary ZnSe; pseudomorphic epilayers with thickness of about 2 micrometers could be grown within a strain range of -0.225% (tension) and 0.137% (compression) at room temperature. Room temperature continuous wave operation of diode lasers having the quaternary as cladding layers was achieved with a lifetime of longer than 20 seconds. These index-guided laser diodes, employing the Zn(Se,Te) graded ohmic contact (adopted to contact p-type (Zn,Mg)(S,Se), have provided a significant reduction in lasing threshold voltage to 4.2 V.

Paper Details

Date Published: 11 May 1994
PDF: 7 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175785
Show Author Affiliations
L. He, Purdue Univ. (United States)
Donald C. Grillo, Purdue Univ. (United States)
Jung Han, Purdue Univ. (United States)
Yongping Fan, Purdue Univ. (United States)
Mike D. Ringle, Purdue Univ. (United States)
S. M. Clark, Purdue Univ. (United States)
Robert L. Gunshor, Purdue Univ. (United States)
Heonsu Jeon, Brown Univ. (United States)
A. Salokatve, Brown Univ. (United States)
Arto V. Nurmikko, Brown Univ. (United States)
Guo-Chun Hua, Purdue Univ. (United States)
Nobuo Otsuka, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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