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Proceedings Paper

Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy
Author(s): Bradford G. Orr; M. D. Johnson; C. Orme; John L. Sudijono; A. W. Hunt
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Paper Abstract

The molecular beam epitaxy growth of GaAs homoepitaxial films has been studied. Scanning tunneling microscopy images show that in the earliest stages of growth the surface morphology oscillates between one with two-dimensional islands and flat terraces. Concomitant with the decay of the RHEED oscillations, the surface morphology evolves to a dynamical steady state characterized by a constant value of the step density. Numerical models of the growth allow a prediction to be made for the asymtotic value of the step density. On a larger length scale (approximately 10 micrometers ) the surface morphology is found to consist of large mounds. The angle of the mounds with respect to the substrate is fixed and is determined by the separation between nucleating islands. This growth instability is found for singular surfaces and is absent for vicinal surfaces grown under step flow conditions.

Paper Details

Date Published: 11 May 1994
PDF: 8 pages
Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175784
Show Author Affiliations
Bradford G. Orr, Univ. of Michigan (United States)
M. D. Johnson, Univ. of Michigan (United States)
C. Orme, Univ. of Michigan (United States)
John L. Sudijono, Univ. of Michigan (United States)
A. W. Hunt, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 2140:
Epitaxial Growth Processes
Chris J. Palmstrom; Maria C. Tamargo, Editor(s)

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