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Proceedings Paper

Quantum well intermixing for optoelectronic integration
Author(s): John H. Marsh; A. Catrina Bryce
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Paper Abstract

Intermixing the wells and barriers of quantum well structures generally results in an increase in the bandgap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing, have been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer -- such processes offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICs). Recent progress in QWI techniques is reviewed, concentrating on processes that are compatible with PIC applications and illustrated with device demonstrators.

Paper Details

Date Published: 11 May 1994
PDF: 9 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175733
Show Author Affiliations
John H. Marsh, Univ. of Glasgow (United Kingdom)
A. Catrina Bryce, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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