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Proceedings Paper

Exciton dynamics in GaAs/GaAlAs, InGaAs/GaAs, and InGaAs/AlGaAs quantum wells
Author(s): Zhong Ying Xu; Changping Luo; Shi Rong Jin; Z. L. Yuan; Jizong Xu; Baozhen Zheng
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Paper Abstract

Photoluminescence (PL) and time-resolved PL measurements were used to study the exciton recombination processes in GaAs/AlGaAs, InGaAs/GaAs, and InGaAs/AlGaAs quantum wells (QWs). An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/AlGaAs samples, and attributed to the reduced overlap of the electron and hole wave functions and the increase of the exciton effective volume. In InGaAs/GaAs strained QWs the measured exciton lifetimes were found to be of In composition dependence: the more the indium composition, the shorter the lifetime. The mechanisms, including the random alloy disordering and the degeneration of quasi two-dimensional properties of excitons were inferred to explain the experimental results. The nonradiative recombination was stressed in our InGaAs/AlGaAs QWs. A combined analysis of cw PL and time-resolved PL measurements allows us to separate the radiative and nonradiative decay times in our sample. The observed dominant nonradiative recombination has been tentatively ascribed to the poor quality of AlGaAs.

Paper Details

Date Published: 11 May 1994
PDF: 8 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175732
Show Author Affiliations
Zhong Ying Xu, Institute of Semiconductors (China)
Changping Luo, Institute of Semiconductors (China)
Shi Rong Jin, Institute of Semiconductors (China)
Z. L. Yuan, National Lab. for Superconductors and Microstructures (China)
Jizong Xu, Institute of Semiconductors (China)
Baozhen Zheng, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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