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Proceedings Paper

Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers
Author(s): Mitra B. Dutta; Jagadeesh Pamulapati; Peter G. Newman; L. P. Fu; Thomas Schmiedel; S. T. Lee; W. Y. Yu; Athos P. Petrou
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Paper Abstract

We present a photoluminescence and Raman study of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. Electrons transfer from the silicon donor states associated with the AlAs X-valley minima to the GaAs wells where they form a dense quasi two-dimensional electron gas. At zero magnetic field the luminescence spectrum is broad and featureless lacking any sharp excitonic features characteristic of undoped wells. In the presence of a magnetic field applied parallel to the growth axis the luminescence exhibits a number of distinct lines that are due to interband transitions between conduction and valence band Landau levels. The Raman spectra were excited in resonance with the e3h3 exciton. At zero field a feature associated with the e1 yields e2 intersubband transition is observed. When an external magnetic field is applied, this feature evolves into a combination mode between the e1 yields e2 transition and the electron cyclotron resonance.

Paper Details

Date Published: 11 May 1994
PDF: 9 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175730
Show Author Affiliations
Mitra B. Dutta, Army Research Lab. (United States)
Jagadeesh Pamulapati, Army Research Lab. (United States)
Peter G. Newman, Army Research Lab. (United States)
L. P. Fu, SUNY/Buffalo (United States)
Thomas Schmiedel, SUNY/Buffalo (United States)
S. T. Lee, SUNY/Buffalo (United States)
W. Y. Yu, SUNY/Buffalo (United States)
Athos P. Petrou, SUNY/Buffalo (United States)


Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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