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Proceedings Paper

Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells
Author(s): Bartev J. Vartanian; James S. Harris
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Paper Abstract

Normal incidence absorption between valence band states is demonstrated in high indium content InGaAs/AlGaAs quantum wells (QWs) grown on GaAs. We report absorption at energies up to 300 meV (4.13 micrometers ) and integrated absorption fractions as high as 56 mAbs-meV per QW. The dependence of the absorption strength and peak energy on well width, barrier width, doping concentration, and doping profile is explored. It is found that a stronger absorption is obtained with the same sheet doping density for structures where the doping is in the barriers. We also discuss the differences observed between transverse magnetic and transverse electric incident polarizations in the absorption spectra.

Paper Details

Date Published: 11 May 1994
PDF: 10 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175725
Show Author Affiliations
Bartev J. Vartanian, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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