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Proceedings Paper

Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces
Author(s): Jose Sanchez-Dehesa; Francisco Meseguer; R. Mayoral; Juan A. Porto; Ceferino Lopez; Jose A. Martinez-Lozano; A. Vinattieri; Marcello Colocci; A. Marti-Ceschin; Nicolas Grandjean; J. Massies
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Paper Abstract

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells wit large In content (x equals 0.35). We associate this behavior to the localization of carriers in regions of quasi one-dimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements and explained through theoretical calculations.

Paper Details

Date Published: 11 May 1994
PDF: 12 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175718
Show Author Affiliations
Jose Sanchez-Dehesa, GSIC and Univ. Autonoma (Spain)
Francisco Meseguer, GSIC and Univ. Autonoma (Spain)
R. Mayoral, GSIC and Univ. Autonoma (Spain)
Juan A. Porto, GSIC and Univ. Autonoma (Spain)
Ceferino Lopez, GSIC and Univ. Autonoma (Spain)
Jose A. Martinez-Lozano, Univ. degli Studi di Firenze (Italy)
A. Vinattieri, Univ. degli Studi di Firenze (Italy)
Marcello Colocci, Univ. degli Studi di Firenze (Italy)
A. Marti-Ceschin, Lab. de Physique du Solide et Energie Solaire (France)
Nicolas Grandjean, Lab. de Physique du Solide et Energie Solaire (France)
J. Massies, Lab. de Physique du Solide et Energie Solaire (France)


Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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