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Proceedings Paper

Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0um and 4.1-2.1 um)InGaAs/AlGaAs asymmetric quantum wells
Author(s): Eric L. Martinet; Gary L. Woods; Herman C. Chui; James S. Harris Jr.; Martin M. Fejer; Chris W. Rella; Bruce A. Richman
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Paper Abstract

Conduction band intersubband absorption and second harmonic generation (SHG) are demonstrated in doubly resonant asymmetric step high indium content quantum wells (QW) grown on a GaAs substrate. Intersubband absorption peaks at 5.51 micrometers and 3.05 micrometers corresponding to the 1 to 2 and 1 to 3 transitions are measured. The susceptibility of SHG from the QW, (Chi) QW(2), is measured using a free electron laser by interference between the SHG fields generated from the QW and the GaAs substrate. A large asymmetry in the SHG power with rotation angle of the sample arising from (Chi) QW(2) is observed. The magnitude and phase of (Chi) QW(2) is measured in the 4.6 - 6.3 micrometers pump wavelength range. (Chi) QW(2) is of maximum amplitude at 6.0 micrometers with a value of 145 +/- 20 nm/V. A change in the sign of the phase of (Chi) QW(2) within the SHG resonance is demonstrated for the first time. Agreement of both the linear and nonlinear properties to a simple model assuming Lorentzian linewidths is discussed. SHG of 2.0 micrometers light is also demonstrated in coupled In0.60Ga0.40As/AlAs quantum wells.

Paper Details

Date Published: 11 May 1994
PDF: 11 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175710
Show Author Affiliations
Eric L. Martinet, Stanford Univ. (United States)
Gary L. Woods, Stanford Univ. (United States)
Herman C. Chui, Stanford Univ. (United States)
James S. Harris Jr., Stanford Univ. (United States)
Martin M. Fejer, Stanford Univ. (United States)
Chris W. Rella, Stanford Univ. (United States)
Bruce A. Richman, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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