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Proceedings Paper

Second harmonic generation in p-type GaAs quantum wells
Author(s): Zhiwei Xu; Jury V. Vandyshev; Gary W. Wicks; Philippe M. Fauchet; Mike J. Shaw; Milan Jaros; Bruce A. Richman; Chris W. Rella; H. Alan Schwettman
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Paper Abstract

We have performed second harmonic generation (SHG) measurements in the 3 - 5 micrometers region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al0.5Ga0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the (Chi) xyz(2) component. The results are explained by a full pseudopotential band structure calculation of (Chi) (2).

Paper Details

Date Published: 11 May 1994
PDF: 10 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175709
Show Author Affiliations
Zhiwei Xu, Univ. of Rochester (United States)
Jury V. Vandyshev, Univ. of Rochester (United States)
Gary W. Wicks, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)
Mike J. Shaw, Univ. of Newcastle upon Tyne (United Kingdom)
Milan Jaros, Univ. of Newcastle upon Tyne (United Kingdom)
Bruce A. Richman, Stanford Univ. (United States)
Chris W. Rella, Stanford Univ. (United States)
H. Alan Schwettman, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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