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Proceedings Paper

Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures
Author(s): Hao Qiang; Fred H. Pollak; Ying-Sheng Huang; W. S. Chi; R. Droopad; David L. Mathine; George N. Maracas
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Paper Abstract

We have studied the photoreflectance spectra at 300 K and 80 K related to the intersubband transitions from several (001) GaAs/GaAlAs structures fabricated by molecular beam epitaxy using the digital alloy compositional grading (DACG) method. These samples include an asymmetric triangular quantum well (ATQW) and three rectangular quantum wells (RQW) with different unit cells [50 angstrom (X 2), 25 angstrom (X 4) and 12.5 angstrom (X 8)]. For the ATQW comparison of the observed intersubband resonances with a theoretical calculation (envelope function method) provided a self-consistent verification that the DACG produced the intended result, i.e., an effective linearly graded profile. For the RQW materials the 12.5 angstrom unit cell sample essentially had the characteristics of the intended analog configuration while the other two samples displayed observable differences.

Paper Details

Date Published: 11 May 1994
PDF: 9 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175706
Show Author Affiliations
Hao Qiang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
Ying-Sheng Huang, National Taiwan Institute of Technology (Taiwan)
W. S. Chi, National Taiwan Institute of Technology (Taiwan)
R. Droopad, Arizona State Univ. (United States)
David L. Mathine, Arizona State Univ. (United States)
George N. Maracas, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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