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Proceedings Paper

Enhanced quantum well intermixing using multiple ion implantation
Author(s): Philip J. Poole; Paul Garrett Piva; Margaret Buchanan; Garth Champion; Ian M. Templeton; Geof C. Aers; Robin L. Williams; Alain P. Roth; Zbigniew R. Wasilewski; Emil S. Koteles; N. Sylvain Charbonneau; Jacques Beauvais
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Paper Abstract

Quantum well intermixing has been performed using ion implantation techniques to increase the optical bandgap in a spatially selective manner. We show that there is a maximum single dose beyond which further intermixing of the QWs is impeded by damage to the semiconductor surface. We overcome this problem by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have demonstrated shifts in optical bandgap for multiple implants greater than seven times that observed for a single implant.

Paper Details

Date Published: 11 May 1994
PDF: 8 pages
Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175702
Show Author Affiliations
Philip J. Poole, National Research Council of Canada (Canada)
Paul Garrett Piva, Univ. of Ottawa (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)
Garth Champion, National Research Council of Canada (Canada)
Ian M. Templeton, National Research Council of Canada (Canada)
Geof C. Aers, National Research Council of Canada (Canada)
Robin L. Williams, National Research Council of Canada (Canada)
Alain P. Roth, National Research Council of Canada (Canada)
Zbigniew R. Wasilewski, National Research Council of Canada (Canada)
Emil S. Koteles, National Research Council of Canada (Canada)
N. Sylvain Charbonneau, National Research Council of Canada (Canada)
Jacques Beauvais, Univ. of Sherbrooke (Canada)


Published in SPIE Proceedings Vol. 2139:
Quantum Well and Superlattice Physics V
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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