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Proceedings Paper

Multiple-exposure interferometric lithography
Author(s): Saleem H. Zaidi; Steven R. J. Brueck
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Paper Abstract

Interferometric lithography provides a simple, inexpensive technique for the fabrication of large areas of extreme sub-micrometers structures. Using a 364 nm Ar-ion laser source, gratings with periods to 0.2 micrometers and CDs as small as 30 nm are reported. Multiple exposure interferometric lithography provides the all important extension to 2-D structures. Importantly, pairwise exposures maintain the effectively infinite depth-of-field while still allowing complex structures. Mix and match with conventional optical lithography provides additional flexibility. An interdigitated structure suitable for high-speed photodetectors and conductive particle sensors is an example.

Paper Details

Date Published: 17 May 1994
PDF: 7 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175478
Show Author Affiliations
Saleem H. Zaidi, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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