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Proceedings Paper

Application of CVD antireflective-layer process for sub-half-micrometer devices
Author(s): Hideaki Mito; Yoshiyuki Tani; Yoshimitsu Okuda; Yoshihiro Todokoro; Toshiaki Tatsuta; Mikio Sawai; Osamu Tsujii
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Paper Abstract

The lithographic performance and process applicability of the anti-reflective-layer (ARL) process using amorphous carbon have been studied in i-line and KrF excimer laser lithography. The ARL thickness of 30 nm was used. With ARL, the reflectivity from the silicon substrate reduced to less than 30%. The reduction of the reflectivity with ARL process was effective not only for the silicon substrate but also for the tungsten silicide substrate and aluminum substrate. The pattern profile and depth of focus in the resist on ARL were almost the same as those without ARL. The ARL process has been successfully applied for the fabrication of 0.35 micrometers CMOS polycide gate fabrication using i-line lithography and 0.35 micrometers DRAM aluminum wiring using excimer laser lithography.

Paper Details

Date Published: 17 May 1994
PDF: 10 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175472
Show Author Affiliations
Hideaki Mito, Matsushita Electronics Corp. (Japan)
Yoshiyuki Tani, Matsushita Electronics Corp. (Japan)
Yoshimitsu Okuda, Matsushita Electronics Corp. (Japan)
Yoshihiro Todokoro, Matsushita Electronics Corp. (Japan)
Toshiaki Tatsuta, SAMCO International Inc. (Japan)
Mikio Sawai, SAMCO International Inc. (Japan)
Osamu Tsujii, SAMCO International Inc. (Japan)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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