Share Email Print

Proceedings Paper

Comparison of deep-UV reflection control methods for interconnect layers
Author(s): Joseph J. Ferrari; Sasha K. Dass
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The swing curve, more specifically the reflectance versus resist thickness, has been measured for APEX-E coated on 3 different film stacks for interconnects: Titanium nitride (TiN) capped aluminum, Brewer ARC DC9 coated aluminum, and CD9 coated on the TiN capped aluminum. The exposure and focus latitudes have been measured for each of the above film stacks along with pre-etch and post-etch cross section profiles. It appears that either the TiN or CD9 could be used as an anti-reflective layer (ARL) based on the swing curve alone, however, the TiN capped aluminum degrades the APEX-E profile to such an extent that TiN cannot be used as an effective ARL. Similar data, swing curves and process latitudes, were collected for the contact film stacks of silicon dioxide on aluminum, and CD9 coated silicon dioxide on aluminum. The swing curves showed erratic behavior, which is most likely due to oxide thickness variations across the wafer. Measurements of the across wafer contact size variation were taken to quantify the improvement in critical dimension control that results from the use of an ARL.

Paper Details

Date Published: 17 May 1994
PDF: 9 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175460
Show Author Affiliations
Joseph J. Ferrari, Digital Equipment Corp. (United States)
Sasha K. Dass, Digital Equipment Corp. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

© SPIE. Terms of Use
Back to Top