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Proceedings Paper

Quarter-micrometer i-line lithography using an alternating phase-shift mask
Author(s): Hung-Eil Kim; YoungSik Kim; Chul-Seung Lee; Young-Mog Ham; Dong-Jun Ahn; Soo-Han Choi
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Paper Abstract

Phase-shifting mask allows remarkable improvement of the resolution and depth of focus than is possible with conventional mask. In this paper, we examine the optimum coherence factor ((sigma) ) and numerical aperture (NA) by considering the process margins of conventional and alternating shifter L&S patterns on high NA i-line stepper and next we investigate the possibility to apply this optimum parameter in real devices of 0.25 micrometers - 0.35 micrometers design rules. We evaluate the process window, line and space duty ratio, CD difference by proximity effect, illumination uniformity, and neighboring linewidth variation with experimental and simulations including resist profile as well as aerial image. In this experiment, we obtained the DOF of 2.0 micrometers for 0.25 micrometers alternating shifter L&S with an optimum coherence factor on high NA i-line stepper and we can conclude that 256 Mb DRAM with 0.25 micrometers design rule could be printed with large DOF.

Paper Details

Date Published: 17 May 1994
PDF: 11 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175457
Show Author Affiliations
Hung-Eil Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
YoungSik Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chul-Seung Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young-Mog Ham, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dong-Jun Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Soo-Han Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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