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Proceedings Paper

Application of subresolution phase-shift mask with G-line stepper for sub-half-micrometer gate GaAs circuits
Author(s): Yih-Cheng Shih; Joseph G. Garofalo
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Paper Abstract

KrF lasers with up to 500 Hz repetition rate and a bandwidth of about 1 pm are in use for DUV-microlithography. Increasing resist sensitivity demands for even higher repetition rate are needed in order to allow precise dose control. In some cases step & scan exposure tools apply reflective optics instead of refractive ones. This diminishes the bandwidth requirements by about two orders of magnitude, but a high polarization degree of >= 98% is a basic requirement for the laser light source. Dose control and statistics define the second basic requirement for the laser. A dose accuracy of less than 2% demands small energy increments, i.e., for pulse energy in the 10 to 20 mJ range. Throughput requires 10 to 20 W of average laser power. Therefore, the repetition rate must be in the 1 kHz range.

Paper Details

Date Published: 17 May 1994
PDF: 14 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175454
Show Author Affiliations
Yih-Cheng Shih, AT&T Bell Labs. (United States)
Joseph G. Garofalo, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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