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Proceedings Paper

Aerial image measurements on a commercial stepper
Author(s): Charles H. Fields; William N. Partlo; William G. Oldham
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Paper Abstract

A new method of testing high numerical aperture microlithographic lenses involves measuring the aerial image produced by the lens rather than using developed resist profiles. Direct measurement of the aerial image eliminates any process variations associated with the resist processing and also removes the subjective nature of evaluating resist profiles. The means of characterizing the aerial image is to measure the image intensity from grating patterns positioned at the image plane. Our image monitor used an artifact mask cover with 2-D scanning pinholes placed over a photodetector. This pinhole cover was fabricated in an 800 angstrom thick layer of amorphous silicon. The size of the pinholes is 0.2 micrometers and the pitch of the pinholes is 6.0 micrometers . This system of Aerial Image Measurement (AIM) has been successfully implemented on a 0.53 NA, deep-UV (DUV) microlithography stepper. In this paper we present the results of various direct aerial images such as elbows, contacts and isolated lines and space patterns measured with this technique. These images are produced from conventional chrome DUV masks.

Paper Details

Date Published: 17 May 1994
PDF: 11 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175453
Show Author Affiliations
Charles H. Fields, Univ. of California/Berkeley (United States)
William N. Partlo, Cymer Laser Tech. (United States)
William G. Oldham, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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